Method of reducing step height difference between doped...

Details Method of reducing step height difference between doped... Method of reducing step height difference between doped...

2004-08-26

2010-02-09

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S196000, C438S221000, C438S427000, C257SE21540, C257SE21628

Reexamination Certificate

active

07659180

ABSTRACT:
In one embodiment, a method of fabricating one or more transistors in an integrated circuit includes an annealing step prior to a gate oxidation step. The annealing step may comprise a rapid thermal annealing (RTA) step performed prior to a gate oxidation pre-clean step. Among other advantages, the annealing step reduces a step height difference between P-doped and N-doped regions of a field oxide of a shallow trench isolation structure. The shallow trench isolation structure may be separating a PMOS transistor and an NMOS transistor in the integrated circuit.

REFERENCES:
patent: 6124189 (2000-09-01), Watanabe et al.
patent: 6140191 (2000-10-01), Gardner et al.
patent: 6235568 (2001-05-01), Murthy et al.
patent: 6524901 (2003-02-01), Trivedi
patent: 6524904 (2003-02-01), Segawa et al.
patent: 6656764 (2003-12-01), Wang et al.
patent: 2002/0102775 (2002-08-01), Houng et al.
patent: 2004/0077171 (2004-04-01), Chuang et al.
S. Shishiguchi, et al., “The reduction of grain size in LPCVD poly-Si by in situ oxygen and phosphorus doping” 1996, pp. 689-693, Journal of Crystal Growth.
Kuang-Chao Chen, et al, “Applications of Single-Wafer Rapid-Thermal Processing to the Manufacture of Advanced Flash Memory” May 2003, pp. 128-137, IEEE Transactions on Semiconductor Manufacturing, vol. 16, No. 2.
Pierre C. Pazan, et al., “A Highly Manufacturable Trench Isolation Process for Deep Submicron DRAMs” 1993, pp. 57-60, IEDM, IEEE.
Byung-Jin Cho, et al., “Evaluation of a vertical tube concept for RTP” 1993, pp. 165-169, Mat. Res. Soc. Symp. Proc. vol. 303, Materials Research Society.

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