Method of reducing sputtering burn-in time, minimizing sputtered

Details Method of reducing sputtering burn-in time, minimizing sputtered Method of reducing sputtering burn-in time, minimizing sputtered

1997-05-02

2000-02-29

McDonald, Rodney

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20419234, 205640, 134 1, 134 11, 216 13, 216 52, 216 65, 216 66, 216 67, 216 74, 216 75, 216 94, 216 96, 216100, 53396, 53408, C23C 1434, B65B 3100

Patent

active

060305142

ABSTRACT:
A target for sputtering is subjected to a surface treatment process and special packaging after target manufacture for improved sputtering performance and process and yield by reducing particulates. The sputtering target is first surface treated to remove oxides, impurities and contaminants. The surface treated target is then covered with a metallic enclosure and, optionally, a passivating barrier layer. The metallic enclosure protects the target surface from direct contact with subsequently employed packaging material such as plastic bags, thereby eliminating sources of organic materials during sputtering operations. The surface treatment of the target removes deformed material, smearing, twins, or burrs and the like from the target surface, reducing "burn-in" or sputter conditioning time prior to production sputtering of thin films.

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