Method of reducing particulate contamination during...

Details Method of reducing particulate contamination during... Method of reducing particulate contamination during...

2005-02-01

2005-02-01

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000

Reexamination Certificate

active

06849548

ABSTRACT:
A method of polishing the surface of a semiconductor wafer such that the adherence of abrasive particles to the surface of the wafer is minimized, resulting in a semiconductor wafer having a reduced number of pits. The invented method has two stages. The first stage follows traditional polishing practice using chemical mechanical polishing. The second stage diverges from traditional practices and provides for a final polishing step or steps involving the polishing of the wafer with a polishing solution having no abrasive particles.

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patent: 1 155 777 (2001-11-01), None

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