Method of reducing mobile ion contaminants in semiconductor film

Details Method of reducing mobile ion contaminants in semiconductor film Method of reducing mobile ion contaminants in semiconductor film

1998-01-26

2000-01-25

Bowers, Charles

Semiconductor device manufacturing: process

Gettering of substrate

438476, H01L 2130

Patent

active

060178051

ABSTRACT:
The present invention provides the broad concept of increasing product performance and reliability by causing the ion contaminants to migrate to a region of the semiconductor film and removing that region (containing a concentration of the ion contaminants), thus reducing a total concentration of the ion contaminants in the semiconductor film. Since a concentration of ion contaminants may adversely affect performance and reliability of devices manufactured from semiconductor films having the ion contaminants, the present invention removes the ion contaminants to alleviate performance and reliability problems associated with the presence of the ion contaminants.

REFERENCES:
patent: 4812756 (1989-03-01), Curtis et al.
patent: 5646053 (1997-07-01), Schepis et al.
Gregory S. Horner, Michael A. Peters; Corona Oxide Semiconductor Test; Semiconductor Test Supplement--Feb./Mar. 1995; pp. 1-2.
Tom G. Miller; A New Approach for Measuring Oxide Thickness; Semiconductor International Jul., 1995; pp. 1-2.
Gregory S. Horner, Meindert Kleefstra, Tom G. Miller, Michael A. Peters; Monitoring Electrically Active Contaminants to Assess Oxide Quality; Solid State Technology Jun. 1995; pp. 1-4.
John Bickley; Quantox.TM. Non-Contact Oxide Monitoring System; Keithley Instruments, Inc. 1995; pp. 1-6.

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