Method of reducing metal impurities of upgraded...

Details Method of reducing metal impurities of upgraded... Method of reducing metal impurities of upgraded...

2011-07-05

2011-07-05

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C257SE23137, C257S913000

Reexamination Certificate

active

07972942

ABSTRACT:
Metal impurities of an upgraded metallurgical grade (UMG) silicon (Si) wafer are reduced. The UMG Si wafer having a 5N (99.999%) purity is chosen to grow a high-quality epitaxial Si thin film through atmospheric pressure chemical vapor deposition (APCVD). Through heat treating diffusion, the epitaxial Si film is used to form sink positions for the metal impurities in the UMG Si wafer. By using concentration gradient, temperature gradient and interface defect, individual and comprehensive effects are built for enhancing purity of the UMG Si wafer from 5N to 6N. Thus, a low-cost Si wafer can be fabricated for Si-based solar cell through a simple, fast and effective method.

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