Method of reducing metal contamination during semiconductor proc

Details Method of reducing metal contamination during semiconductor proc Method of reducing metal contamination during semiconductor proc

1997-03-11

1999-06-29

Simmons, David A.

Metal treatment

Process of modifying or maintaining internal physical...

Processes of coating utilizing a reactive composition which...

148275, 148276, 148280, 148285, 4284722, 438379, 438680, 438681, 438909, C23C 2200

Patent

active

059163780

ABSTRACT:
A method of reducing metal contamination during semiconductor processing in a reactor having metal components is provided. The method includes forming an aluminum oxide layer on the surface of certain of the metal components before processing of substrates. The aluminum oxide layer substantially prevents the formation of volatile metal atoms from the metal components. The aluminum oxide layer is formed by heating the metal component first in a dry N.sub.2 atmosphere to a first temperature, and then in a dry H.sub.2 atmosphere to a second temperature. The component is then soaked at the second temperature in a wet H.sub.2 atmosphere to form the aluminum oxide layer, and is followed by soaking at the second temperature in a dry H.sub.2 atmosphere to reduce any other metal oxides that may have formed. The component is then cooled first in a dry H.sub.2 atmosphere, and then in a dry N.sub.2 atmosphere where a layer of substantially pure aluminum oxide is provided on the surface of the metal component.

REFERENCES:
patent: 4929287 (1990-05-01), Hirbod
patent: 5294586 (1994-03-01), Sigler

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