Method of reducing hot-electron degradation in semiconductor dev

Details Method of reducing hot-electron degradation in semiconductor dev Method of reducing hot-electron degradation in semiconductor dev

1992-03-25

1993-07-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437192, 437200, H01L 2170

Patent

active

052293114

ABSTRACT:
A method of reducing the degradation effects associated with avalanche injection or tunnelling of hot-electrons in a field-effect semiconductor device is disclosed. The method of the present invention includes covering the active regions of the semiconductor device with a protective titanium barrier layer which is deposited directly underneath the ordinary metalization layers used for connecting the devices to bit and word lines within an array. Inclusion of the titanium barrier layer in a flash memory device results in a substantial improvement in the erasetime push-out and reduces excess charge loss normally associated with hot-electron devices.

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