Method of reducing edge current leakage in N channel silicon-on-

Details Method of reducing edge current leakage in N channel silicon-on- Method of reducing edge current leakage in N channel silicon-on-

1980-10-15

1982-02-02

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

29571, 156656, 156657, 156665, 357 23, C23C 1500

Patent

active

043138098

ABSTRACT:
A novel process for improving the operation of silicon-on-sapphire devices by removing or minimizing edge current leakage. The reduction in leakage current is accomplished by subjecting the completed device to a sputtering operation and depositing thereon a layer of, for example, aluminum which is subsequently removed prior to scribing and dicing.

REFERENCES:
patent: 3890632 (1975-06-01), Ham et al.
patent: 4111775 (1978-09-01), Hollis, Jr. et al.

Affiliated with

Also associated with

Rating

Method of reducing edge current leakage in N channel silicon-on- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reducing edge current leakage in N channel silicon-on-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing edge current leakage in N channel silicon-on- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1820390