Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1999-03-17
2000-11-07
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257640, 257649, H01L 2972
Patent
active
061440833
ABSTRACT:
A method of fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the substantially smooth anti-reflective coating is to be deposited. The anti-reflective coating may be a dielectric anti-reflective coating (DARC) which includes silicon, oxygen and nitrogen, and is preferably of the general formula Si.sub.x O.sub.y N.sub.z, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over an anti-reflective coating that has been fabricated in accordance with the inventive method has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.
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Micro)n Technology, Inc.
Wojciechowicz Edward
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