Method of reducing critical current density of oxide superconduc

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505702, 505701, 505730, 427 62, 427 38, 427 431, 357 5, 2504923, B05D 512, B05D 306

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050533835

ABSTRACT:
The critical current density J.sub.c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T.sub.c (R.dbd.0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e.g., 1 MeV) ions. The ability to tailor J.sub.c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

REFERENCES:
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Physica, vol. 126, (1984) 275-279, "Superconductivity in Ba (Pb, Bi)O.sub.3 ".
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