Method of reducing contamination-induced process variations...

Details Method of reducing contamination-induced process variations... Method of reducing contamination-induced process variations...

2005-09-27

2005-09-27

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S528000

Reexamination Certificate

active

06949399

ABSTRACT:
When changing a dopant species in an implantation tool, typically a clean process is performed to reduce cross-contamination, which is considered a major issue in implant cycles applied in advanced CMOS processes. Especially, the employment of an implanter previously used for heavy ions may generate increased cross-contamination when subsequently used for boron or phosphorus implants at moderate energies. A clean implant process using xenon gas may effectively reduce this cross-contamination at shorter process times compared to a conventional argon clean step.

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patent: 6710358 (2004-03-01), Chen et al.
patent: 2002/0164845 (2002-11-01), Hamamoto

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