Method of reducing contamination by removing an interlayer...

Details Method of reducing contamination by removing an interlayer... Method of reducing contamination by removing an interlayer...

2006-05-17

2008-08-12

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C257SE21088, C257SE21122, C257SE21568

Reexamination Certificate

active

07410885

ABSTRACT:
By performing at least one additional wet chemical etch process in the edge region and in particular on the bevel of a substrate during the formation of a metallization layer, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. Moreover, an additional wet chemical etch process may be performed after the deposition of the metal to remove any unwanted metal and barrier material from the edge region and the bevel. Accordingly, defect issues and contamination of substrates and process tools may be efficiently reduced.

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patent: 103 26 273 (2005-01-01), None

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