Method of reducing carbon incorporation into films produced by c

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427533, 427535, 4272551, 4272552, 4272557, 134 11, 134 12, 437937, C23C 1656

Patent

active

056910096

ABSTRACT:
A method of reducing carbon incorporation into films is disclosed which comprises the steps of depositing a layer on a substrate by CVD using organic precursors, the layer comprising hydrocarbons or carbides; and utlizing a reactive hydrogen plasma to displace the hydrocarbons or carbides away from the layer.

REFERENCES:
patent: 4558509 (1985-12-01), Tiwari
patent: 4568565 (1986-02-01), Gupta et al.
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5300321 (1994-04-01), Nakano et al.
patent: 5320878 (1994-06-01), Maya
patent: 5399379 (1995-03-01), Sandhu
patent: 5403620 (1995-04-01), Kaesz et al.
Niemer, Burkhard et al., "Organometallic Chemical Vapor Deposition Of Tungsten Metal, And Suppression Of Carbon Incorporation By Codeposition Of Platinum", University of California, Department of Chemical Engineering, 4 Aug. 1992 No page number.
Conrad, J.R. et al., "Ion Beam Assisted Coating And Surface Modification With Plasma Source Ion Implantation", J.Vac. Sci. Technol. A8 (4) Jul./Aug. 1990, pp. 3146-3151.
H. Watanabe et al., "Stacked Capacitor Cells for High-Density Dynamic RAM's", IED 1988, pp. 600-603.
T. Morihara et al., "Disk-Shaped Stacked Capacitor Cell For 256 Mb Dynamic Random-Access Memory", Aug. 19, 1994, Jpn. J. Appl. Phys. Vol. 33 (1994), Pt. 1, No. 8, pp. 14-19.
S. Woo et al., "Selective Etching Technology of in-situ P Doped Poly-Si (SEDOP) for High Density DRAM Capacitors", 1994 Symposium on VLSI Technology of Technical Papers, pp. 25-26.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of reducing carbon incorporation into films produced by c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reducing carbon incorporation into films produced by c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing carbon incorporation into films produced by c will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2104890

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.