Method of reducing carbon incorporation into films produced by c

Details Method of reducing carbon incorporation into films produced by c Method of reducing carbon incorporation into films produced by c

1996-01-08

1997-12-02

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Photoinitiated chemical vapor deposition

427584, 427250, 427255, 4272552, C23C 1634

Patent

active

056933770

ABSTRACT:
A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp.sub.2 Ti(N.sub.3).sub.2); c) exposing the gaseous precursor to high intensity light within the reactor effective to dissociate titanium from the precursor; and d) exposing the substrate to the light exposed gaseous precursor to cause a layer comprising titanium of the precursor to be deposited thereon, the deposited layer having reduced carbon incorporation over what would otherwise be provided under the same deposition conditions but without high intensity light exposure.

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