Method of reducing an etch rate

Details Method of reducing an etch rate Method of reducing an etch rate

2007-06-28

2010-11-02

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Forming or treating article containing magnetically...

Reexamination Certificate

active

07824562

ABSTRACT:
A method of fabricating a bit patterned storage medium includes obtaining a substrate having a magnetic layer and forming a mask over the magnetic layer. The magnetic layer is etched through the mask using a reactive ion etch. The etch rate of the mask is reduced by introducing a gas into the reactive ion etch.

REFERENCES:
patent: 4233394 (1980-11-01), Helbert
patent: 5607599 (1997-03-01), Ichihara et al.
patent: 6778441 (2004-08-01), Forbes et al.
patent: 2004/0026369 (2004-02-01), Ying et al.
patent: 2006/0202244 (2006-09-01), Ju et al.

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