Method of reduced stress recrystallization

Details Method of reduced stress recrystallization Method of reduced stress recrystallization

1989-03-29

1989-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG4, 148DIG48, 148DIG71, 148DIG152, 427 551, 156603, 156620, 437 83, 437174, 437247, 437942, 437963, 437973, H01L 2120, H01L 21324

Patent

active

048883026

ABSTRACT:
A defect free monocrystalline layer of silicon on an insulator is produced by forming a thin layer of silicon dioxide on a monocrystalline silicon substrate, forming a thin layer of polycrystalline or amorphous silicon on the silicon dioxide layer and focussing two beams from lamps on the thin silicon layer to form a line image providing a melt zone surrounded by two narrow heated zones having temperatures lower than the melt zone and having a temperature differential of from 2.degree.-10.degree. C./mm decreasing form the melt zone while heating the substrate to a temperature below that of the zones heated by the lamps and scanning the structure.

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Pinizotto et al., "Subgrain Boundaries in Laterally Seeded Silicon-or-Oxide Formed by Graphite Strip Heater Recrystallization", Appl. Phys. Lett., 40(5), Mar. 1, 1982, pp. 388-390.

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