Method of reading nonvolatile memory device and method of...

Details Method of reading nonvolatile memory device and method of... Method of reading nonvolatile memory device and method of...

2011-03-01

2011-03-01

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185290, C365S185110, C365S189040, C365S236000

Reexamination Certificate

active

07898865

ABSTRACT:
A method of reading a nonvolatile memory device may include, after an ntherase operation is performed, reading dummy cells on which a program operation has been performed based on a first read voltage, where n is an integer greater than zero, counting a number of dummy cells that are read as having a threshold voltage lower than the first read voltage, when the number is a critical value or more, resetting a read voltage, and performing, based on the reset read voltage, a read operation on memory cells that belong to the same memory cell block as the dummy cells and on which a program operation has been performed on the memory cells after the ntherase operation has been performed.

REFERENCES:
patent: 6351417 (2002-02-01), Shiga et al.
patent: 2008/0192541 (2008-08-01), Kang et al.
Notice of Allowance issued from Korean Intellectual Property Office on May 31, 2010.

Affiliated with

Also associated with

Rating

Method of reading nonvolatile memory device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reading nonvolatile memory device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reading nonvolatile memory device and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2708495