Method of reading, erasing and programming a nonvolatile flash-E

Details Method of reading, erasing and programming a nonvolatile flash-E Method of reading, erasing and programming a nonvolatile flash-E

1994-03-15

1996-12-24

Nelms, David C.

Static information storage and retrieval

Floating gate

Disturbance control

36518513, 36518526, 3651853, 36518533, 36518527, G11C 1602

Patent

active

055879462

ABSTRACT:
To reduce read and write errors caused by depleted memory array cells being turned on even when not selected, the nonselected memory cells are so biased as to present a floating terminal and a terminal at a positive voltage with respect to the substrate region. The threshold voltage of nonselected cells (i.e., the minimum voltage between the gate and source terminals for the cell to be turned on) increases due to a "body effect", whereby the threshold voltage depends on the voltage drop between the source terminal and the substrate. The source line of a selected cell is biased to a positive value greater than that of the bit line of the selected cell. Methods for reading, writing and erasing cells using certain voltage levels are disclosed.

REFERENCES:
patent: 4888734 (1989-12-01), Lee et al.
patent: 4972371 (1990-11-01), Komori et al.
patent: 5097444 (1992-03-01), Fong
patent: 5128895 (1992-07-01), Park
patent: 5241507 (1993-08-01), Fong
patent: 5341329 (1994-08-01), Takebuchi
patent: 5396458 (1995-03-01), Shimoji

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