Method of reactivating implanted dopants and oxidation semicondu

Details Method of reactivating implanted dopants and oxidation semicondu Method of reactivating implanted dopants and oxidation semicondu

1982-08-31

1984-12-25

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 219 1055A, 219 1055M, 357 91, 427 451, H01L 21263, H05B 903, C23C 1100

Patent

active

044901836

ABSTRACT:
Dopants in semiconductor bodies which have been deactivated during processing are reactivated by pulse heating the body to a temperature within the region in which the semiconductor sheet resistivity decreases with increasing anneal temperature. Typically this comprises raising the body to 1000.degree. C. within 40 seconds or less in an inert atmosphere and allowing it to cool immediately or within approximately 30 seconds. The heating is so rapid that diffusion side effects are minimized. Pulse heating may be achieved by means of a sealable microwave heating chamber (1) which can be pressurized or vented as desired and into which microwave energy is directed for a predetermined time. The microwave heating can also be employed for other processing, particularly high pressure oxidation of silicon.

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Powell et al., Appl. Phys. Letts. 39, (Jul. 1981), 150.

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