Metal treatment – Compositions – Heat treating
Patent
1975-01-28
1976-01-20
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
357 91, 357 91, H01L 21265
Patent
active
039335305
ABSTRACT:
In one embodiment, a semiconductor device, such as an insulated-gate-field-effect-transistor (IGFET), is simultaneously radiation hardened with Al ions and its threshold voltage stabilized with halide ions, such as Cl ions, by bombarding a silicon dioxide gate insulator of the device with molecular ions of an aluminum halide, such as AlCl.sub.2 .sup.+ ions. In another embodiment, a surface (target) of silicon is bombarded with molecular AlCl.sub.2 .sup.+ ions to ion implant separate Al ions and Cl ions. There, an oxide layer subsequently thermally grown on the bombarded surface includes the Al ions and the Cl ions, and the oxide layer is radiation hardened and gettered.
REFERENCES:
patent: 3556878 (1971-01-01), Ginsbach et al.
patent: 3570112 (1971-03-01), Barry et al.
patent: 3799813 (1974-03-01), Danchenko
Perkins et al., "Radiation Effects in Modified oxide Insulators-etc., " IEEE Trans. Nucl. Sci., NS-15, 17b, (1968).
Donovan et al. " Radiation Hardening of Thermal Oxides on Silicon-Etc., " J. Appl. Phys., Vol. 43, No. 6, June'72, pp. 2897-2899.
Green et al., "Method to Purify Semiconductor Wafers," IBM Tech. Discl. Bull., Vol. 16, No. 5, Oct. 73, pp. 1612-1613.
Douglas Edward Curtis
Mueller Charles William
Wu Chung Pao
Christoffersen H.
Davis J. M.
RCA Corporation
Rutledge L. Dewayne
Williams R. P.
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