Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-06-07
2011-06-07
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
Reexamination Certificate
active
07955882
ABSTRACT:
A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency of the plasma waves, and as a result, the generated radiation are adjusted using a voltage applied to the semiconducting device.
REFERENCES:
patent: 4236124 (1980-11-01), Rockwood
patent: 4989052 (1991-01-01), Okada et al.
patent: 5371388 (1994-12-01), Oda
patent: 5468972 (1995-11-01), Yamada
patent: 5705847 (1998-01-01), Kashiwa et al.
patent: 5729017 (1998-03-01), Brener et al.
patent: 5767969 (1998-06-01), Chevalier
patent: 6178275 (2001-01-01), Nerses et al.
patent: 6269199 (2001-07-01), Maloney
patent: 6720589 (2004-04-01), Shields
patent: 2003/0016716 (2003-01-01), Mahonty
patent: 2004/0188703 (2004-09-01), Cheng et al.
Shur et al., “Novel heterodimensional diodes and transistors”, Solid-State Electronics, vol. 38, Issue 9, Sep. 1995, pp. 1727-1730.
M.J.W. Rodwell, “Preface: High Speed Integrated Circuit Technology, Towards 100 GHz Logic”, International Journal of High Speed Electronics and Systems, vol. 11, No. 1, 2 pages, Mar. 2001.
Dyakonov et al., “Plasma Wave Electronics: Novel Terahertz Devices Using Two Dimensional Electron Fluid”, IEEE Transactions on Electron Devices, vol. 43, No. 10, pp. 1640-1645, Oct. 1996.
Dyakonov et al., “Plasma Wave Electronics for Terahertz Applications”, pp. 187-207, in “Terahertz Sources and Systems”, R.E. Miles, P. Harrison and D. Lippens, Editors, NATO Science Series, II, Matehmatics, Physics and Chemistry, vol. 27, Kluwer Academic Publishers, Dordrecht, Boston, and London 2001, pp. 1-21.
Shur et al., “Two Dimensional Electrons in Field Effect Transistors”, International Journal of High Speed Electronics and Systems, vol. 9, No. 1, pp. 65-99, Mar. 1998, pp. 1-34.
Ryzhii et al., “Resonant Detection and Frequency Multiplication of Terahertz Radiation Utilizing Plasma Waves in Resonant-Tunneling Transistors”, Journal of Applied Physics, vol. 88, No. 5, pp. 2868-2871, Sep. 1, 2000.
Ryzhii et al., “Terahertz Photomixing in Quantum Well Structures Using Resonant Excitation of Plasma Oscillations”, Journal of Applied Physics, vol. 91, No. 4, pp. 1875-1881, Feb. 15, 2002.
Shur et al., “Ballistic Transport in Semiconductor at Low Temperatures for Low-Power High-Speed Logic”, IEEE Transactions on Electron Devices, vol. Ed-26, No. 11, pp. 1677-1683, Nov. 1979.
Timp et al., “The Ballistic Nano-Transistor”, IEDM Technical Digest, pp. 55-58, 1999.
Kawaura et al., “Transistor Characteristics of 14-nm-Gate-Length EJ-Mosfets's”, IEEE Transactions on Electron Devices, vol. 47, No. 4, pp. 856-860, Apr. 2000.
Kastalsky et al., “Conductance of Small Semiconductor Devices”, Solid State Comm., vol. 39, No. 6, 715, 1981, pp. 107-114.
Lee et al., “Impedance of Thin Semiconductor Films in Low Electric Field”, Journal of Applied Physics, vol. 54, No. 7, pp. 4028-4034, Jul. 1983.
Dyakonov et al., “Ballistic Transport in High Mobility Semiconductors”, The Physics of Semiconductors Ed. by M. Scheffler and R. Zimmermann, World Scientific, pp. 145-148, Singapore, 1996, pp. 1-4.
Michael S. Shur, “Low Ballistic Mobility in Submicron High Electron Mobility Transistors”, IEEE, EDL, vol. 23, No. 9, pp. 511-513, Sep. 2002, pp. 1-12.
Michael S. Shur, “Ballistic Transport in a Semiconductor with Collisions”, IEEE Transactions on Electron Devices, vol. ED-28, No. 10, pp. 1120-1130, Oct. 1981.
Dyakonov et al., “Detection, Mixing, and Frequency Multiplication of Terahertz Radiation by Two-Dimensional Electronic Fluid”, IEEE Transactions on Electron Devices, vol. 43, No. 3, pp. 380-387, Mar. 1996.
Dyakonov et al., “Shallow Water Analogy for a Ballistic Field Effect Transistor: New Mechanism of Plasma Wave Generation by dc Current”, Physical Review Letters, vol. 71, No. 15, pp. 2465-2468, Oct. 11, 1993.
Shur et al., “Plasma Wave Electronics”, Terahertz Sensing Technology, vol. 1: Electronic Devices and Advanced Technology, 2003, pp. 1-26.
A. V. Chaplik, “Possible Crystallization of Charge Carriers in Low-Density Inversion Layers”, Soviet Physics JETP, vol. 35, No. 2, pp. 395-397, Aug. 1972.
Masatoshi Nakayama, “Theory of Surface Waves Coupled to Surface Carriers”, Journal of the Physical Society of Japan, vol. 36, No. 2, pp. 393-398, Feb. 1974.
Allen et al., “Observation of the Two-Dimensional Plasmon in Silicon Inversion Layers”, Physical Review Letters, vol. 38, No. 17, pp. 980-983, Apr. 25, 1977.
Tsui et al., “Far Infrared Emission from Plasma Oscillations of Si Inversion Layers”, Solid State Communications, vol. 35, pp. 875-877, 1980.
Burke et al., “High Frequency Conductivity of the High-Mobility Two-Dimensional Electron Gas”, Applied Physics Letters, vol. 76, No. 6, pp. 745-747, Feb. 7, 2000.
Lu et al., “Resonant Terahertz Dector Utilizing a High Electron Mobility Transistor”, IEDM, 1998, pp. 453-456.
Knap et al., “Resonant Detection of Subterahertz Radiation by Plasma Waves in a Submicron Field-Effect Transistor”, Applied Physics Letters, vol. 80, No. 18, pp. 3433-3435, May 6, 2002.
Peralta et al., “Terahertz Photoconductivity and Plasmon Modes in Double-Quantum-Well Field-Effect Transistors”, Applied Physics Letters, vol. 81, No. 9, pp. 1627-1629, Aug. 26, 2002.
Dyakonov et al., “Ballistic FET as Tunable Terahertz Oscillator”, Proceedings of 2nd International Semiconductor Device Research Symposium, Charlottesville, VA, pp. 741-744, Dec. 1993.
Crowe et al., “Terahertz GaAs Devices and Circuits for Heterodyne Receiver Applications”, in Compound Semiconductor Electronics, The Age of Maturity, Editor Michael Shur, World Scientific, Selected Topics in Electronics and Systems, vol. 4, pp. 209-245, 1996.
Ferguson et al., “Materials for Terahertz Science and Technology”, Nature Materials, vol. 1, pp. 26-33, Sep. 2002.
Peatman et al., “A Novel Schottky/2-DEG Diode for Millimeter- and Submillimeter- Wave Multiplier Applications”, IEEE Electron Device Letters, vol. 13, No. 1, pp. 11-13, Jan. 1992.
Peatman et al., “A Schottky/2-DEG Varactor Diode for Milimeter and Submillimeter Wave Multiplier Applications”, The Third International Conference on Space THz Technology, Ann Arbor, MI., pp. 93-109, Mar. 24-26, 1992, pp. 1-17.
K. T. Tsen, “Ultrafast Physical Processes in Semicondutors”, Semiconductors and Semimetals, vol. 67, pp. 390-440, 2001.
Peatman et al., “Narrow Channel 2-D Mesfet for Low Power Electronics”, IEEE Transactions on Electron Devices, vol. 42, No. 9, pp. 1569-1573, Sep. 1995.
Shur et al., “Novel Heterodimensional Diodes and Transistors”, Solid-State Electronics, vol. 38, No. 9, pp. 1727-1730, 1995.
Hurt et al., “Comparison of 2-D and 3-D Side-gated FETs”, Proceedings of International Semiconductor Device Research Symposium, vol. 1, pp. 79-82, Charlottesville, VA, ISBN 1-88092-04-4, Dec. 1995.
New York Times, nytimes.com, “Trying to Put New Zip in to Moore's Law”, http://www.nytimes.com/2008/02/24/business/24proto.html, Feb. 24, 2008.
compoundsemiconductor.net, “New Record for Stimulated Emission in Al GaN/AIN”, http://compoundsemconductor.net/cws/article
ews/16457, Nov. 25, 2002.
Sohn et al., “Tunable Terahertz Generation Using Femtosecond Pulse Shaping”, Applied Physics Letters, vol. 81, No. 1, pp. 13-15, Jul. 1, 2002.
Jo Ann McDonald, “Pioneering the Blue Spectrum”, Compound SemiNews, Jun. 11, 2003.
Sarukura et al., “Submilliwatt, Short-Pulse, Terahertz Radiation from Femtosecond-laser Irradiated InAs in a Magnetic Field”, Lasers and Elect
Gaska Remigijus
Ryzhii Victor
Shur Michael
Dickey Thomas L
Hoffman Warnick LLC
LaBatt John W.
Sensor Electronic Technology, Inc.
LandOfFree
Method of radiation generation and manipulation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of radiation generation and manipulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of radiation generation and manipulation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2736676