Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2002-01-31
2003-06-24
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S156000, C365S159000, C365S190000, C365S189070, C365S226000
Reexamination Certificate
active
06584002
ABSTRACT:
FIELD OF THE INVENTION
This invention relates generally to CMOS integrated circuits and more particularly to circuits for storing digital data.
SUMMARY OF THE INVENTION
A pair of cross-coupled inverters that hold a digital state are powered by supplies that also function as row select and column bit lines. A voltage differential between at least a first pair of supply lines and a second pair of supply lines may cause a current to flow into at least a third supply line depending upon the state of the cells. This current is sensed to determine whether the query matched the contents of the cells.
REFERENCES:
patent: 5726562 (1998-03-01), Mizuno
patent: 5856951 (1999-01-01), Arimoto et al.
patent: 5872737 (1999-02-01), Tsuruda et al.
patent: 6504741 (2003-01-01), Ema
Brooks Robert J
Neudeck Alexander J
Hewlett--Packard Development Company, L.P.
Neudeck Alexander J.
Tran Andrew Q.
LandOfFree
Method of querying a four-transistor memory array as a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of querying a four-transistor memory array as a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of querying a four-transistor memory array as a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3158869