Method of purifying metallurgical-grade silicon

Details Method of purifying metallurgical-grade silicon Method of purifying metallurgical-grade silicon

1980-10-14

1981-12-29

Peters, G. O.

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C01B 3302

Patent

active

043082459

ABSTRACT:
A method of purifying metallurgical-grade silicon for the production of silicon solar cells is provided, in which metallurgical-grade silicon is dissolved in aluminum and brought into contact with an aluminum sulphide extraction melt. Thereafter, the silicon is crystallized out and separated off by cooling the melt to a minimum temperature of 600.degree. C. The aluminum melt remaining can then be recharged with silicon, heated, brought into contact with the extraction melt, so that additional silicon can be crystallized out.

REFERENCES:
patent: 3069240 (1962-12-01), Armand
patent: 3097068 (1963-07-01), Lutz et al.
patent: 4195067 (1980-03-01), Kotnal

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