Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1996-08-27
2000-08-29
Speer, Timothy M.
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
216 93, 216 99, B44C 122
Patent
active
061108391
ABSTRACT:
A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.
REFERENCES:
patent: 4859280 (1989-08-01), Lowry et al.
patent: 5348617 (1994-09-01), Brayman
patent: 5470421 (1995-11-01), Nakada et al.
Ajito Toshio
Kudo Hideo
Nakano Masami
Uchiyama Isao
Shin-Etsu Handotai & Co., Ltd.
Speer Timothy M.
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