Method of pulsing vapor precursors in an ALD reactor

Details Method of pulsing vapor precursors in an ALD reactor Method of pulsing vapor precursors in an ALD reactor

2004-12-30

2010-12-07

Chen, Bret (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255280, C117S085000, C117S089000

Reexamination Certificate

active

07846499

ABSTRACT:
A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method. The method comprises vaporizing at least one precursor from a source material container maintained at a vaporising temperature, repeatedly feeding pulses of the vaporized precursor via a feed line into the reaction chamber at a first pressure, and subsequently purging the reaction chamber with pulses of inactive gas fed via the feed line at a second pressure. The second pressure is maintained at the same as or a higher level than the first pressure for separating successive pulses of said vaporized precursor from each other.

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Technology Backgrounder: Atomic Layer Deposition from ICKnowledge LLC. pp. 1-7, 2004.

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