Method of providing optical quality silicon surface

Details Method of providing optical quality silicon surface Method of providing optical quality silicon surface

2005-05-10

2005-05-10

Mills, Gregory (Department: 1763)

Etching a substrate: processes

Forming or treating optical article

C438S031000

Reexamination Certificate

active

06890450

ABSTRACT:
A system and method for making an optical quality silicon surface on optical systems, including integrated optical waveguide device structures, is provided. A rough surface is formed through a dry etching process. Thermal oxide is grown on the surface either by a wet or dry oxidation process. A HF based solution is used to etch the grown oxide, reducing the surface roughness. The process may be performed repeatedly in order to obtain the desired amount of smoothness.

REFERENCES:
patent: 4787691 (1988-11-01), Lorenzo et al.
patent: 4789642 (1988-12-01), Lorenzo et al.
patent: 5337398 (1994-08-01), Benzoni et al.
patent: 5787214 (1998-07-01), Harpin et al.
patent: 5908305 (1999-06-01), Crampton et al.
patent: 20020031321 (2002-03-01), Lee et al.
patent: 20020104822 (2002-08-01), Naydenkov et al.
patent: 1037272 (2000-09-01), None
patent: 1120818 (2001-08-01), None
W. H. Juan and S. W. Pang “Controlling Sidewall Smoothness for Micromachined Si Mirrors and Lenses” Jornal of Vacuum Science and Technology Part B. American Institute of Physics, New York, US. vol. 14, No. 6 Dec. 1996, pp. 4080-4084.*
A.G. Rickman and G.T. Reed. Silicon on Insulator Optical Rib Waveguides: loss, mode characteristics, bends, and Y-junctions IEE Proc. Optoelectron., vol. 141 No. 6 Dec. 1994, pp. 391-393.*
“Fabrication of High Aspect Ratio Photonic Bandgap Structures on Silicon-on-Insulator”, Mikhail Naydenkov, et al.—Proceedings of SPIE Photonics West, vol. 3936, San Jose, CA, Jan. 24-25, 2000.
Juan. W.H., et al.: “Controlling Sidewall smoothness for Micromachined Si Mirrors and Lenses.” Journal of Vacuum Science and Technology: Part B, American Institute of Physics. New York, US, vol. 14, No. 6, Dec. 1996 (1996j-12), pp. 4080-4084, XP002200112; ISSN: 0734-211X.
Yahata, A. et al.: “Smoothing of SI Trench Sidewall Surface By Chemical Dry Etching And Sacrificial Oxidation.” Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics. Tokyo, JP, vol. 37, No. 7, Jul. 1998 (1998-07), pp. 3954-3955, XP000822994; ISSN: 0021-4922.
Yahata, A. et al.: “Effect of Trench-Sidewall Smoothing On On-State Voltage of Injection Enhancement Gate Transistor.” Proceedings of the 10THInternational Symposium on Power Semiconductor Devices & IC's. ISPSD '98. Kyoto, Jun. 3-6, 1998. International Symposium on Power Semiconductor Devices & IC's, New York, NY, IEEE, US, Jun. 3, 1998 (1998-06-03), pp. 273-276, XP000801078; ISBN: 0-7803-4752-8.

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