Method of providing lower contact resistance in MOS transistors

Details Method of providing lower contact resistance in MOS transistors Method of providing lower contact resistance in MOS transistors

1992-02-07

1994-05-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437131, 437 34, 148DIG58, 148DIG59, 257281, 257409, 257410, H01L 21265

Patent

active

053127668

ABSTRACT:
Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.

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D. K. Sadana, et al. "Germanium implantation into silicon: an alternate pre-amporphization/rapid thermal annealing procedure for shallow junction technology" Mat. Res. Soc. Sym. Proc. 23, 303 (1984).

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