Method of providing gettering sites through electrode windows

Details Method of providing gettering sites through electrode windows Method of providing gettering sites through electrode windows

1980-12-18

1983-02-01

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 148187, 357 91, 427 82, 427 93, H01L 21265

Patent

active

043714030

ABSTRACT:
A method of fabricating semiconductor integrated circuit devices in which leakage currents at the junction and at the surface of one or more regions of desired conductivity type formed in a substrate are substantially reduced. Shallow source and drain regions are formed by ion implantation of arsenic, an insulating layer of phosphosilicate glass (PSG) is formed on the entire surface of the semiconductor substrate, openings are cut through the PSG layer to form windows of smaller area than the surface area of the regions for contacts, electrodes, to the regions, oxygen ions having the effect of gettering defects are ion implanted through these windows into the surface of source and drain regions but controlled so as not to reach the pn junctions, and the PSG layer is thermally melted to produce a MOS memory device, other MOS devices, or bipolar transistors.

REFERENCES:
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patent: 3933530 (1976-01-01), Mueller et al.
patent: 4061506 (1977-12-01), McElroy
patent: 4069068 (1978-01-01), Beyer et al.
patent: 4114256 (1978-09-01), Thibault et al.
patent: 4133701 (1979-01-01), Greenstein et al.
patent: 4271582 (1981-06-01), Shirai et al.
Beyer et al., IBM-TDB, 20, (1978), 3122.
Bogardus et al., IBM-TDB, 16, (1973), 1066.
Geipel et al., IBM-TDB, 21, (1978), 1373.

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