Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-01-11
2011-01-11
Nguyen, Cuong Q (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S046000
Reexamination Certificate
active
07867792
ABSTRACT:
An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region (24) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region (24) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region (24) is of a material that acts as a trap on electrons and is provided over a p-type substrate (20) common to the two sections (A, B).
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Aoki, et al., “High Performance Modulator/Integrated Light Sources Grown by an In-Plane Bandgap Energy-Control Technique”,OFC '95 Optical Fiber Communication, Summaries of Papers, Optical Society of America(1995), vol. 8, pp. 25-26.
Agresti Michele
Rigo Cesare
Vallone Marco
Avago Technologies Fiber (IP) Singapore Pte. Ltd.
Nguyen Cuong Q
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