Method of providing electrical separation in integrated...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S024000, C438S046000

Reexamination Certificate

active

07867792

ABSTRACT:
An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region (24) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region (24) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region (24) is of a material that acts as a trap on electrons and is provided over a p-type substrate (20) common to the two sections (A, B).

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patent: 2005/0036729 (2005-02-01), Kim et al.
patent: 61/290790 (1986-12-01), None
patent: 62/213131 (1987-09-01), None
Aoki, et al., “High Performance Modulator/Integrated Light Sources Grown by an In-Plane Bandgap Energy-Control Technique”,OFC '95 Optical Fiber Communication, Summaries of Papers, Optical Society of America(1995), vol. 8, pp. 25-26.

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