Method of providing a silicon diode array target with improved b

Details Method of providing a silicon diode array target with improved b Method of providing a silicon diode array target with improved b

1975-09-05

1977-01-25

Lazarus, Richard B.

H01J 9233

Patent

active

040048420

ABSTRACT:
A charge storage diode array target is provided with a resistive layer over the output side of the target over the diode portions and the area between diodes, with metal contact caps over the resistive layer over the diode portions. The target is operationally aged with input radiation sufficient to produce an output signal current density of at least about 300 nanoamps per square centimeter at a given reverse bias potential, for a period of at least 50 hours. The target thereafter exhibits high beam acceptance and low lag characteristic.

REFERENCES:
patent: 3630590 (1971-12-01), Dermstedt et al.

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