Method of providing a mark for identification on a silicon surfa

Details Method of providing a mark for identification on a silicon surfa Method of providing a mark for identification on a silicon surfa

1996-05-21

1997-03-11

Kunemund, Robert

Fishing, trapping, and vermin destroying

148DIG50, 148 333, 1566441, 1566621, 437239, H01L 21465

Patent

active

056101040

ABSTRACT:
The present invention concerns a method for making an identification mark on a silicon surface. In a preferred embodiment, the identification mark formed on the silicon surface does not substantially score the silicon. A silicon or silicon dioxide surface coated with an insulating layer is marked by laser scribing, leaving an exposed area on the silicon or the silicon dioxide. The exposed area on the silicon wafer is preferably not marked by the laser scribing. The exposed silicon surface is then oxidized by dry or wet oxidizing. The silicon oxide can be subsequently removed to leave an etched mark. The method reduces or eliminates the formation of stresses and silicon slag at the etched mark that can cause defects and reduce yield.

REFERENCES:
patent: 5237343 (1993-08-01), Osada
French, William B. "Technique for reducing surface leakage and surface breakdown in semiconductor devices", Technical Notes No. 919. Publication of RCA, Princeton, NJ Oct. 25, 1972.

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