Method of proudcing a MIS transistor

Details Method of proudcing a MIS transistor Method of proudcing a MIS transistor

1991-10-25

1993-06-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437241, 437238, 437 50, 437919, H01L 21265

Patent

active

052216322

ABSTRACT:
A MIS transistor, has a semiconductor substrate of a first conduction type; a gate insulation film and a gate electrode which are selectively formed on the semiconductor substrate; an insulating film formed on the side surface of the gate electrode and on the semiconductor substrate; a first gate side wall layer provided on the upper surface and side surface of the insulating film and having a dielectric constant greater than that of the insulating film, the first gate side wall layer having a height smaller than that of the gate electrode; and a second gate side wall layer composed of an insulating film which covers the first gate side wall layer. This MIS transistor can be produced by a known LSI production technique employing self-alignment, without increasing the number of the steps of the process.

REFERENCES:
patent: 4545114 (1985-10-01), Ito et al.
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4818334 (1989-04-01), Shwartzman et al.
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5013675 (1991-05-01), Shen et al.
patent: 5073514 (1991-12-01), Ito et al.

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