Metal treatment – Compositions – Heat treating
Patent
1975-03-26
1976-09-28
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
357 91, H01L 21263
Patent
active
039829677
ABSTRACT:
In integrated circuit fabrication, a method is provided for simultaneously forming two regions of the same conductivity-type such as the base and isolation regions. In one embodiment, an epitaxial layer of one conductivity-type is formed on a substrate of opposite conductivity-type, after which dopant ions of the opposite conductivity-type are introduced into the epitaxial surface areas which are to provide the base and isolation regions, and in addition, the isolation regions are bombarded with non-dopant ions having a maximum atomic number of two, e.g., hydrogen or helium ion while the base regions are appropriately masked and remain umbombarded, said bombardment is carried out at temperatures below 300.degree. C, preferably room temperature. The bombardment is preferably carried out so that the non-dopant ions are implanted primarily in regions below the isolation regions. Next, the wafer is heated at a temperature at a range of from 600.degree. - 900.degree. C which is substantially below normal drive-in diffusion temperatures for unbombarded doped regions. The heating to be maintained for a period sufficient to drive-in diffuse the bombarded isolation regions through the epitaxial layer into contact with the substrate but is insufficient to drive-in the unbombarded base regions to such a depth.
REFERENCES:
patent: 3515956 (1970-06-01), Martin et al.
patent: 3533857 (1970-10-01), Mayer et al.
patent: 3655457 (1972-04-01), Duffy et al.
patent: 3718502 (1973-02-01), Gibbons
patent: 3756862 (1973-09-01), Ahn et al.
patent: 3761319 (1973-09-01), Shannon
Nelson et al. "Radiation-Enhanced Diffusion of Boron in Silicon," Appl. Phy. Let. vol. 15, No. 8, Oct. 15, 1969, pp. 246-248.
Ziegler, "Improving The Electrical . . . etc." IBM Tech. Discl. Bul. vol. 12, No. 10, March 1970, p. 1576.
Gibbons, "Proton-Enhanced Diffusin In Semiconductors," Abstract No. 48, ECS Meeting, May 1974, San Francisco.
Baruch et al., "Redistribution of Boron . . . etc.," Paper III-8, International Conf. on Ion Impl. in Semiconductors, etc. Osaka, J. 8/74.
Ku San-Mei
Pillus Charles A.
Poponiak Michael R.
Schwenker Robert O.
Davis J. M.
IBM Corporation
Kraft J. B.
Rutledge L. Dewayne
LandOfFree
Method of proton-enhanced diffusion for simultaneously forming i does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of proton-enhanced diffusion for simultaneously forming i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of proton-enhanced diffusion for simultaneously forming i will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2079033