Method of protecting wafer front pattern and method of...

Details Method of protecting wafer front pattern and method of... Method of protecting wafer front pattern and method of...

2007-06-26

2007-06-26

Goudreau, George A. (Department: 1763)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S017000, C216S039000, C438S692000, C438S928000

Reexamination Certificate

active

11163989

ABSTRACT:
A wafer comprising a front surface and a back surface is provided. The wafer further includes a front pattern on the front surface, the front pattern having a plurality of holes. A low-viscosity fluid is formed on the front surface and filled into the holes. Following that, a high-viscosity fluid is formed and filled into the holes by diffusion.

REFERENCES:
patent: 6331449 (2001-12-01), Ohsumi
patent: 6391800 (2002-05-01), Redd et al.
patent: 62-132343 (1987-06-01), None
patent: 62-299071 (1987-12-01), None
patent: 03-101128 (1991-04-01), None
patent: 05-109679 (1993-04-01), None
patent: 07-333854 (1995-12-01), None

Affiliated with

Also associated with

Rating

Method of protecting wafer front pattern and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of protecting wafer front pattern and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of protecting wafer front pattern and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3822517