Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-03-28
2006-03-28
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S595000
Reexamination Certificate
active
07018865
ABSTRACT:
A semiconductor material is protected against the formation of a metal silicide by forming a layer of a silicon/germanium alloy on the material. The material which is protected belongs to a component of an integrated circuit comprising other components that have to be subjected to a siliciding operation. The method of protection includes depositing a layer of silicon/germanium alloy on the integrated circuit. The layer of silicon/germanium alloy is then removed from the areas to be silicided. A metal is then deposited on the structure and a metal silicide is formed therefrom. The unreacted metal and the metal/silicon/germanium ternary alloy that may have formed are removed, and the layer of silicon/germanium alloy is removed so as to expose the unsilicided component.
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French Preliminary Search Report, FR 03 07690, dated Mar. 3, 2004.
Froment Benoît
Wacquant François
Dang Phuc T.
Jenkens & Gilchrist PC
STMicroelectronics S.A.
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