Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-05-04
1983-04-26
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 148 15, 148187, 357 24, 357 91, H01L 21263, G11C 1140, H01L 744
Patent
active
043808662
ABSTRACT:
A process is disclosed for fabricating a MOS ROM which allows programming of the ROM late in the process sequence. A conventional silicon gate process is used to fabricate the devices up through the step of patterning the polycrystalline silicon gate electrode. Selected devices in the array are then programmed to an off-state by fabricatng those devices with either the source or drain region offset from the gate electrode. This is accomplished by a programming mask which, together with the gate electrode, provides selective location of the source or drain regions. Devices having an offset source or drain are off-state devices, while those having a normal source and drain function conventionally and conduct when a read voltage is applied.
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Countryman, Jr. Roger S.
Lin Paul T.
Fisher John A.
Motorola Inc.
Roy Upendra
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