Method of programming, reading and erasing memory-diode in a...

Details Method of programming, reading and erasing memory-diode in a... Method of programming, reading and erasing memory-diode in a...

2008-05-27

2008-05-27

Phan, Trong (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

Transistors or diodes

C365S105000, C365S115000, C365S175000

Reexamination Certificate

active

07379317

ABSTRACT:
A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set. An electrical potential is applied across a selected memory-diode, from higher to lower potential in the forward direction, intended to program the selected memory-diode. During this intended programming, each other memory-diode in the array has provided thereacross in the forward direction thereof an electrical potential lower than its threshold voltage. The threshold voltage of each memory-diode can be established by applying an electrical potential across that memory-diode from higher to lower potential in the reverse direction. By so establishing a sufficient threshold voltage, and by selecting appropriate electrical potentials applied to conductors of the array, problems related to current leakage and disturb are avoided.

REFERENCES:
patent: 3588528 (1971-06-01), Terman
patent: 3810128 (1974-05-01), Moser
patent: 5063539 (1991-11-01), Rallapalli
patent: 5471087 (1995-11-01), Buerger, Jr.
patent: 6567296 (2003-05-01), Casagrande et al.
patent: 6947321 (2005-09-01), Tanabe
patent: 7035141 (2006-04-01), Tripsas et al.
patent: 2002/0018366 (2002-02-01), von Schwerin et al.
patent: 2003/0173612 (2003-09-01), Krieger et al.
patent: 2003/0235085 (2003-12-01), Forbes
patent: 2006/0002168 (2006-01-01), Krieger et al.

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