Method of programming of junction-programmable read-only memorie

Static information storage and retrieval – Read only systems – Semiconductive

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365105, G11C 1140

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active

044803184

ABSTRACT:
A method of programming a cell in a PROM, wherein the cell comprises a bipolar transistor having a floating base, comprises applying a current rising with time across the emitter to collector contacts of the bipolar transistor with the collector contact serving as the reference potential, measuring the time at which the rise in voltage suddenly stops and the voltage drops a small amount, and then holding the current for a selected time following the voltage drop, thereby to insure that the emitter base junction of the bipolar transistor is destroyed while at the same time not damaging the base collector junction of the biplolar transistor.

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DeWitt et al., Memory Array, IBM Technical Disclosure Bulletin, vol. 10, No. 1, 6/67, p. 95.

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