Method of programming nonvolatile memory device

Details Method of programming nonvolatile memory device Method of programming nonvolatile memory device

2009-12-31

2011-11-15

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185220, C365S185120, C365S185190

Reexamination Certificate

active

08059460

ABSTRACT:
A method of programming a nonvolatile memory device includes an inputting step for inputting program data to a first latch of each of page buffers, and inputting redundancy data to a second latch of each of the page buffers, a verification result storage step for performing a program operation on selected memory cells using the program data stored in the first latch, performing a verification operation for the program operation, and storing a result of the verification operation in the first latch of each of the page buffers coupled with the selected memory cells, a verification result change step for changing the result stored in the first latch using the redundancy data stored in the second latch, and a verification check step for determining whether all data stored in the second latches, after the verification result change step, are program pass data.

REFERENCES:
patent: 2003/0145176 (2003-07-01), Dvir et al.
patent: 100673704 (2007-01-01), None
patent: 1020080030216 (2008-04-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Feb. 24, 2011.

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