Method of programming non-volatile memory device

Details Method of programming non-volatile memory device Method of programming non-volatile memory device

2011-06-07

2011-06-07

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185020, C365S185030

Reexamination Certificate

active

07957191

ABSTRACT:
A method of programming a non-volatile memory device includes applying a power supply voltage to a drain select line, applying a high level voltage to a drain-side pass word line or a source-side pass word line, and applying a pass voltage to unselected word lines and a program voltage to a selected word line. The high level voltage is applied to the drain-side pass word line or the source-side pass word line before applying the pass voltage to the unselected word lines and the program voltage to the selected word line.

REFERENCES:
patent: 7738291 (2010-06-01), Aritome et al.
patent: 2008/0049494 (2008-02-01), Aritome
patent: 2008/0247234 (2008-10-01), Lee
patent: 1020050109835 (2005-11-01), None
Korean Notice of Allowance for Korean application No. 10-2007-0138856, citing the attached reference(s).

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