Method of programming data in a flash memory device

Details Method of programming data in a flash memory device Method of programming data in a flash memory device

2007-06-29

2008-11-11

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185220

Reexamination Certificate

active

07450432

ABSTRACT:
A method of programming a most significant bit (MSB) data to a multi-level cell in a flash memory device including first and second cells includes performing a first program operation on the first cell using a first program voltage, the first cell being in a first state when the first program operation is performed on the first cell; if the first cell is determined to be in a second state after the first program operation, defining a second program voltage based on a result of comparing the first program voltage with a start voltage predefined for a second program operation; and performing the second program operation on the second cell using the second program voltage that has been defined according to a result of the comparison between the first program voltage and the start voltage.

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