Method of programming an antifuse

Details Method of programming an antifuse Method of programming an antifuse

2005-08-09

2005-08-09

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S532000, C257S535000, C257S536000, C257S539000, C438S131000, C438S467000, C438S060000, C438S957000

Reexamination Certificate

active

06927474

ABSTRACT:
A metal-to-metal capacitor in a semiconductor integrated circuit is converted to a conductive structure by connecting the first metal plate of the capacitor to ground and the second metal plate of the capacitor to a programming voltage, thus causing the insulator material to breakdown and conduct current from the first plate to the second plate.

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