Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2008-06-27
2011-10-11
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185170, C365S185180
Reexamination Certificate
active
08036028
ABSTRACT:
A method of programming a non-volatile memory device with timely-adjusted voltages applied to word lines to prevent program disturb includes applying a first pass voltage to word lines in a direction of a source select line based on a first word line selected for a program operation, wherein the word lines do not include a second word line adjacent to the first word line in a direction of the source select line; and applying a first voltage, a program voltage and a second pass voltage when the first pass voltage reaches a given level. The first voltage is applied to the second word line, the program voltage is provided to the first word line, and the second pass voltage is applied to word lines in a direction of a drain select line on the basis of the first word line.
REFERENCES:
patent: 7684256 (2010-03-01), Kim
patent: 2009/0168537 (2009-07-01), Kim
patent: 10-2006-0107697 (2006-10-01), None
patent: 10-2007-0099988 (2007-10-01), None
patent: 10-2009-0000332 (2009-01-01), None
Notice of Allowance dated Sep. 30, 2009, for Korean application No. 10-2007-0138682.
Hynix / Semiconductor Inc.
Lowe Hauptman & Ham & Berner, LLP
Tran Andrew Q
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