Method of programming a multi level cell

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185030, C365S189070

Reexamination Certificate

active

07948805

ABSTRACT:
A method of programming a multi level cell in a non-volatile memory device includes: performing a program operation on main cells and indicator cells; performing a first verifying operation on the main cells and the indicator cells based on a first verifying voltage; performing repeatedly the program operation and the first verifying operation until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage; and performing a second verifying operation on the main cells and the indicator cells based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.

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