Method of programming a memory cell to contain multiple values

Details Method of programming a memory cell to contain multiple values Method of programming a memory cell to contain multiple values

1996-11-08

1998-11-03

Nelms, David C.

Static information storage and retrieval

Floating gate

Multiple values

36518526, G11C 1134

Patent

active

058319018

ABSTRACT:
A method for programming multiple values in an individual flash memory cell is disclosed. An individual flash cell is programmed by holding the bit line, corresponding to the particular memory cell to a value, V.sub.d, while the voltage on the control gate, V.sub.g, of the memory cell is varied. By varying the voltage on the control gate, multiple values are stored in the memory cell. The resulting values are self-convergent, therefore, verify circuitry becomes unnecessary.

REFERENCES:
patent: 5095344 (1992-03-01), Harari
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5418743 (1995-05-01), Tomioka et al.
patent: 5487033 (1996-01-01), Keeney et al.
patent: 5617357 (1997-04-01), Haddad et al.
"Intel working on multilevel flash," Electronic Engineering Times, Aug. 1, 1994, Issue 808.

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