Method of programming a flash memory device using multilevel...

Details Method of programming a flash memory device using multilevel... Method of programming a flash memory device using multilevel...

2006-05-09

2006-05-09

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185240

Reexamination Certificate

active

07042766

ABSTRACT:
Disclosed is a method of programming a flash memory device to store an amount of charge corresponding to one of a plurality of charged program states. The method can include pulsing the memory device with program voltages including at least a gate voltage. If the gate voltage is greater than or equal to a predetermined minimum threshold voltage for the one of the plurality of charged program states, an amount of charge stored by the memory device can be verified. Otherwise the memory device can be repulsed. This procedure can be carried out until verifying is conducted and the verifying indicates that the amount of charge stored by the memory device corresponds to the one of the plurality of charged program states.

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