Method of programming a flash memory cell and method of...

Details Method of programming a flash memory cell and method of... Method of programming a flash memory cell and method of...

2006-02-14

2006-02-14

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185220

Reexamination Certificate

active

06999343

ABSTRACT:
The disclosed is a method of programming a flash memory cell, comprising; a step of an over-programming of a flash memory cell to-be-programmed; a first recovering step of the over-programmed flash memory cell by adjusting a gate bias of the flash memory cell; a second recovering step of the over-programmed flash memory cell by setting the gate bias to a voltage of 0V and then adjusting a bulk bias of the over-programmed flash memory cell; a third recovering step of the over-programmed flash memory cell by floating the gate bias and then adjusting the bulk bias of the over-programmed flash memory cell; and a fourth recovering step of the over-programmed flash memory cell by adjusting the bulk bias of the over-programmed flash memory cell using a self-boosting operation.

REFERENCES:
patent: 6775184 (2004-08-01), Park et al.

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