Method of programming a flash memory cell

Details Method of programming a flash memory cell Method of programming a flash memory cell

1997-04-01

1999-02-02

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518514, 36518515, 36518526, 36518533, G11C 700

Patent

active

058674268

ABSTRACT:
A method of programming a flash memory cell which increases programming efficiency and characteristics. A depletion area formed at a source region is extended from a surface portion of a silicon substrate to the bottom portion of the silicon substrate. A minority carrier produced at a trap center existing at the extended depletion area receives energy from a high electric field area formed at the silicon substrate between a select gate and floating gate. The minority carrier is then changed into a hot electron by a voltage applied to a drain region. The electron is injected into a floating gate by a vertical direction electric field formed by a high potential voltage applied to a control gate.

REFERENCES:
patent: 5324998 (1994-06-01), Powell
patent: 5349220 (1994-09-01), Hong
patent: 5444655 (1995-08-01), Yoshikawa
patent: 5483484 (1996-01-01), Endoh et al.
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5511021 (1996-04-01), Bergemont et al.

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