Static information storage and retrieval – Read only systems – Semiconductive
Patent
1994-11-14
1995-11-28
Nelms, David C.
Static information storage and retrieval
Read only systems
Semiconductive
365 94, 365103, G11C 1700
Patent
active
054714168
ABSTRACT:
A CMOS ROM is fabricated and programmed using a two-metal fabrication process which is substantially equivalent to a conventional CMOS polysilicon gate manufacturing technique so that the CMOS ROM is advantageously fabricated in the same process steps that are used to fabricate the other, non-ROM circuits on an integrated circuit chip. In this method, multiple bit-lines in a first metal layer are formed which overlie a substrate containing the array of transistors. The bit-lines are connected to drain regions of the transistors. A dielectric insulating layer is formed over the substrate and the bit-lines and the dielectric insulating layer is perforated by vias which allow connecting to the first metal layer. Multiple word-lines and multiple reference voltage lines are formed in a second metal layer overlying the dielectric insulating layer. Either a word-line or a reference voltage line is programmably selected to connect to the gate of a transistor for each transistor of the multiple transistors.
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Koestner Ken John
Le Vu A.
National Semiconductor Corporation
Nelms David C.
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