Method of production of semiconductor light emission device...

Details Method of production of semiconductor light emission device... Method of production of semiconductor light emission device...

2011-04-19

2011-04-19

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C257SE21503, C438S051000, C438S064000

Reexamination Certificate

active

07927896

ABSTRACT:
A method of production of semiconductor light emission devices for forming stripes of two multilayers having different emission wavelengths on a substrate, including the steps of: depositing a first multilayer including an active layer on the substrate; selectively etching the first multilayer to form a plurality of adjoining pairs of stripes of the first multilayer; depositing a second multilayer including an active layer on the substrate and the stripes of the first multilayer; selectively etching the second multilayer to form a plurality of adjoining pairs of stripes of the second multilayer on the substrate between the stripes of the first multilayer; and dividing the substrate between adjoining pairs of stripes of the first multilayer and between adjoining pairs of stripes of the second multilayer to divide it into semiconductor light emission devices provided with a stripe of the first multilayer and the second multilayer having different emission wavelengths.

REFERENCES:
patent: 6778578 (2004-08-01), Lee et al.
patent: 2001/0038101 (2001-11-01), Nemoto
patent: 2004/0208209 (2004-10-01), Okazaki
patent: 2005/0232322 (2005-10-01), Bessho et al.
patent: 2006/0044864 (2006-03-01), Lin et al.
patent: 1989-023592 (1989-01-01), None
patent: 1998-150217 (1998-06-01), None
patent: 2000-244060 (2000-09-01), None
patent: 2001-077457 (2001-03-01), None
patent: 2001-144373 (2001-05-01), None
patent: 2001-244546 (2001-09-01), None
patent: 2002-133696 (2002-05-01), None
Office Action for Application No. JP 2005-018368 dated Apr. 8, 2010.
Office Action dated Apr. 22, 2010, for Japanese Application No. 2005-018369.

Affiliated with

Also associated with

Rating

Method of production of semiconductor light emission device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of production of semiconductor light emission device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of production of semiconductor light emission device... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2694323